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FDD6685
onsemi
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1 | Fast switching speed ; Qualified to AEC Q101 ; High power and current handling capability ; RDS(ON) = 20 mΩ @ VGS = -10V ; -40A, -30V ; RDS(ON) = 30 mΩ @ VGS = -4.5V ; High performance trench technology for extremelylow RDS(ON) | Other | FDD6685 |
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FDD6685
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FDD6685 |
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FDD6685_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FDD6685_NL |
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