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FDD6685 - onsemi

Description: Fast switching speed ; Qualified to AEC Q101 ; High power and current handling capability ; RDS(ON) = 20 mΩ @ VGS = -10V ; -40A, -30V ; RDS(ON) = 30 mΩ @ VGS = -4.5V ; High performance trench technology for extremelylow RDS(ON)

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PCB Footprints
FDD6685 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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3D Models
FDD6685 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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FDD6685 Details

  • Manufacturer Part Number:

    FDD6685

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD6685 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDD6685 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDD6685 for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, minimize the voltage on the VIN pin and use a low-quiescent-current regulator for the VCC pin. Furthermore, consider using a low-power mode or shutdown mode if available.
  • The FDD6685 has a thermal pad that must be connected to a thermal plane on the PCB to dissipate heat. Ensure good thermal conductivity by using a thermal interface material and a heat sink if necessary. Also, keep the device away from other heat sources and ensure good airflow around the device.
  • To troubleshoot issues with the FDD6685, start by checking the input voltage, output voltage, and current. Verify that the device is properly configured and that the EN pin is properly biased. Use an oscilloscope to check for switching noise, ringing, or other anomalies. Consult the datasheet and application notes for specific troubleshooting guidelines.
  • The FDD6685 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during manufacturing and assembly. Use ESD-safe materials and equipment, and ensure that the device is properly grounded during handling and testing.

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FDD6685 Overview

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Part Image FDD6685 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252