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FDD86113LZ
onsemi
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1 | Shielded Gate MOSFET Technology; Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A; Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A; HBM SD Protection Level > 6 kV typical (Note 4); High Performance Trench Technology for Extremely Low rDS(on); High Power and Current Handling Capability in a widely used surface mount package; 100% UIL Tested; RoHS Compliant | Other | FDD86113LZ |
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FDD86113LZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FDD86113LZ |
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