FDD8880 Model Download Search Results
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FDD8880
onsemi
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1 | RDS(ON) = 12 mΩ @ VGS = 4.5V @ ID = 35A; RDS(ON) = 9 mΩ @ VGS = 10V @ ID = 35A; High performance trench technology for extremely low rDS(ON); Low gate charge; High power and current handling capability | Other | FDD8880 |
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FDD8880
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FDD8880 |
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FDD8880
Rochester Electronics LLC
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1 | 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | FDD8880 |
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FDD8880_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FDD8880_NL |
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FDD8880_NL
Rochester Electronics LLC
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1 | 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, D2PAK-3 | FDD8880_NL |
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FDD8880-G
onsemi
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1 | Power Field-Effect Transistor, 35A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FDD8880-G |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
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