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FDH44N50
onsemi
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1 | Reduced RDS(on) ( 110mΩ ( Typ.)@ VGS = 10V, ID = 22A); Improved switching speed with low EMI; 175oC rated junction temperature; Low gate charge Qg results in simple drive requirement ( Typ. 90nC); Improved Gate, avalanche and high reapplied dv/dt ruggedness; Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 40pF) | Transistor Outline, Vertical | FDH44N50 |
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FDH44N50
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | FDH44N50 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to247_3.jpg"])
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