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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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FDMB2307NZ
onsemi
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1 | Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm ; Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A ; Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A ; HBM ESD protection level> 2 kV (Note 3) ; Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A ; RoHS Compliant ; Max rS1S2(on) = 18 mΩat VGS = 4.2 V, ID = 7.4 A | Small Outline No-lead | FDMB2307NZ |
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FDMB2308PZ
onsemi
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1 | Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm ; Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A ; RoHS Compliant ; HBM ESD protection level 2.8 kV (Note 3) ; Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A | Small Outline No-lead | FDMB2308PZ |
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FDMB2307NZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 9.7A I(D), 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMB2307NZ |
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FDMB2308PZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229 | FDMB2308PZ |
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