FDMB3 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDMB3900AN onsemi	1	Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A ; High performance trench technology for extremely low rDS(on) ; Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A ; High power and current handling capability ; Fast switching speed ; RoHS Compliant; Low gate charge	Other	FDMB3900AN	3D model available Symbol and footprint available 3	1 Download Model
	FDMB3800N Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDMB3800N	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMB3900AN Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 7A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDMB3900AN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMB3800N onsemi	1	Dual N-Channel PowerTrench® MOSFET 30V, 4.8A, 40mΩ		FDMB3800N	3D model available Symbol and footprint not available 1	1 Download Model

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