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FDMB3800N - onsemi

Description: Dual N-Channel PowerTrench® MOSFET 30V, 4.8A, 40mΩ

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FDMB3800N - onsemi  - 3D model
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FDMB3800N Details

  • Manufacturer Part Number:

    FDMB3800N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFN-8

  • Package Description:

    MICROFET-8

  • Manufacturer Package Code:

    511CW

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.8 A

  • Drain-source On Resistance-Max:

    40 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMB3800N Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a bias voltage (VCC) between 4.5V to 5.5V. Ensure the input voltage is within the recommended range and the bias voltage is decoupled with a 10uF capacitor.
  • The maximum allowable power dissipation for the FDMB3800N is 2.5W. Ensure the device is operated within the recommended thermal and power dissipation limits to prevent overheating and damage.
  • Handle the device with an anti-static wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, including the use of ESD diodes and resistors.
  • The FDMB3800N is designed to operate at frequencies up to 1GHz. However, the optimal operating frequency range depends on the specific application and should be determined through characterization and testing.

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FDMB3800N Overview

Use the download button to access the FDMB3800N 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FDMB3, or try a keyword search, such as Small Signal Field-Effect Transistors

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