FDMC5614P Model Download Search Results
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FDMC5614P
onsemi
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1 | Max rDS(on) = 100 mΩ @ VGS = -10 V,ID = -5.7A ; Fast switching speed ; Low gate charge ; High performance trench technology for extremely low rDS(on) ; High power and current handling capability ; RoHS Compliant ; Max rDS(on) = 135 mΩ @ VGS = -4.5 V,ID = -4.4A | Other | FDMC5614P |
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FDMC5614P
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 5.7A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDMC5614P |
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FDMC5614P-L701
onsemi
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1 | Power Field-Effect Transistor, 13.5A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDMC5614P-L701 |
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