FDMC8010 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDMC8010 onsemi	1	Max RDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A; Max RDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A; High performance technology for extremely low RDS(on); Termination is Lead-free and RoHS Compliant	Other	FDMC8010	3D model available Symbol and footprint available 3	1 Download Model
	FDMC8010 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 30A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA		FDMC8010	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMC8010DC onsemi	1	Dual Cool™ Top Side Cooling PQFN package; Max rDS(on) = 1.28 mΩ at VGS = 10 V, ID = 37 A; Max rDS(on) = 1.74 mΩ at VGS = 4.5 V, ID = 32 A; High Performance Technology for Extremely Low rDS(on); RoHS Compliant	Other	FDMC8010DC	3D model available Symbol and footprint available 3	1 Download Model
	FDMC8010ET onsemi	1	Power Field-Effect Transistor, 174A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDMC8010ET	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDMC8010ET30 onsemi	1	Power Field-Effect Transistor, 174A I(D), 174V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA		FDMC8010ET30	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMC8010ET30 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor		FDMC8010ET30	3D model not available Symbol and footprint not available 0	0 Build or Request

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