FDMC8200 Model Download Search Results
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FDMC8200
onsemi
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1 | Q1: N-Channel Max. RDS(on) = 20 mΩ at VGS = 10 V, ID = 6A Max. RDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5A ; Q2: N-Channel Max. RDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9A Max. RDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7A ; RoHS Compliant | Other | FDMC8200 |
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FDMC8200
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMC8200 |
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FDMC8200S
onsemi
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1 | Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMC8200S |
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FDMC8200-F128
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 45A I(D), N-Channel, Metal-oxide Semiconductor FET | FDMC8200-F128 |
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FDMC8200S
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMC8200S |
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