FDMC8622 Model Download Search Results
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FDMC8622
onsemi
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1 | 100% UIL Tested; Shielded Gate MOSFET Technology; High performance trench technology for extremely low rDS(on); High power and current handling capability in a widely used surface mount package; Max rDS(on) = 100 mΩat VGS = 6 V, ID = 3 A; Max rDS(on) = 56 mΩat VGS = 10 V, ID = 4 A; Termination is Lead-free and RoHS Compliant | Other | FDMC8622 |
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FDMC8622
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 4A I(D), 100V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | FDMC8622 |
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