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FDMS86250
onsemi
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1 | Shielded Gate MOSFET Technology; Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A; Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A; Advanced package and silicon combinatory for low rDS(on) and high efficiency; MSL1 robust package design; 100% UIL tested; RoHS Compliant | Other | FDMS86250 |
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FDMS86250
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.7A I(D), 150V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS86250 |
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