FDMS86255 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDMS86255 onsemi	1	Next generation enhanced body diode technology, engineered for soft recovery ; Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Shielded Gate MOSFET Technology ; RoHS Compliant ; 100% UIL tested ; Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A ; MSL1 robust package design	Other	FDMS86255	3D model available Symbol and footprint available 3	1 Download Model
	FDMS86255 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 150V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA		FDMS86255	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86255ET150 onsemi	1	Power Field-Effect Transistor, 10A I(D), 150V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA		FDMS86255ET150	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86255ET150 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor		FDMS86255ET150	3D model not available Symbol and footprint not available 0	0 Build or Request

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