FDN357N Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDN357N onsemi	1	1.9 A, 30 V; Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.; High density cell design for extremely low RDS(ON).; Exceptional on-resistance and maximum DC current capability.; RDS(ON) = 0.090 Ω @ VGS = 4.5 V; RDS(ON) = 0.060 Ω @ VGS = 10 V	SOT23 (3-Pin)	FDN357N	3D model available Symbol and footprint available 3	1 Download Model
	FDN357N Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDN357N	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN357NL99Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDN357NL99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN357NS62Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDN357NS62Z	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDN357ND87Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDN357ND87Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDN357N_NL Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDN357N_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

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