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FDN357N - onsemi

Description: 1.9 A, 30 V; Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.; High density cell design for extremely low RDS(ON).; Exceptional on-resistance and maximum DC current capability.; RDS(ON) = 0.090 Ω @ VGS = 4.5 V; RDS(ON) = 0.060 Ω @ VGS = 10 V

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PCB Footprints
FDN357N - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−231
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3D Models
FDN357N - onsemi  - 3D model - SOT23 (3-Pin) - SOT−231
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FDN357N Details

  • Manufacturer Part Number:

    FDN357N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.9 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN357N Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FDN357N is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a capacitor (e.g., 100 nF) between the gate and source pins to filter out noise. Also, ensure the drain-source voltage is within the recommended range.
  • To minimize thermal resistance, use a thermal pad on the PCB, and connect it to a large copper area (e.g., a ground plane) to dissipate heat efficiently. Keep the thermal pad away from other components to prevent thermal coupling.
  • Yes, the FDN357N is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • To protect the FDN357N from ESD, use an ESD wrist strap or mat when handling the device, and ensure the PCB has ESD protection components (e.g., TVS diodes) to absorb voltage spikes.

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FDN357N Overview

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Part Image FDN357ND87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET