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FDP2D3N10C
onsemi
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1 | Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A; High Performance Trench Technology for Extremely Low RDS(on); Extremely Low Reverse Recovery Charge, Qrr; Low Gate Charge, QG = 108nC ( Typ.); High Power and Current Handling Capability; 100% UIL Tested; RoHS Compliant | Transistor Outline, Vertical | FDP2D3N10C |
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