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Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDP52N20 onsemi
1 Low gate charge ( Typ. 49nC); RoHS compliant; Low Crss ( Typ. 66pF); RDS(on) = 41mΩ ( Typ.)@ VGS = 10V, ID = 26A; 100% avalanche tested Transistor Outline, Vertical FDP52N20 1 Download Model
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FDP52N20 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB FDP52N20 0 Build or Request
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