FDS2670 Model Download Search Results
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FDS2670
onsemi
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1 | 3.0A, 200 V; High power and current handling capability; RDS(ON) = 130 mΩ @ VGS = 10 V; Fast switching speed; Low gate charge; High performance trench technology for extremely low RDS(ON) | Small Outline Packages | FDS2670 |
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FDS2670
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS2670 |
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FDS2670
Rochester Electronics LLC
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1 | 3000mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 | FDS2670 |
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FDS2670S62Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS2670S62Z |
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FDS2670L86Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS2670L86Z |
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FDS2670F011
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS2670F011 |
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FDS2670_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS2670_NL |
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FDS2670D84Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS2670D84Z |
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FDS2670L99Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDS2670L99Z |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
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