FDS4935BZ Model Download Search Results
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FDS4935BZ
onsemi
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1 | High power and current handling capability; RDS(ON) = 22 mΩ @ VGS = –10 V; ESD protection diode (note 3) ; –6.9 A, –30 V; High performance trench technology for extremelylow RDS(ON); Extended VGSS range (–25V) for battery applications; RDS(ON) = 35 m @ VGS = – 4.5 V | Small Outline Packages | FDS4935BZ |
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FDS4935BZ
Rochester Electronics LLC
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1 | 6900mA, 30V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SOP-8 | FDS4935BZ |
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FDS4935BZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.022ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS4935BZ |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
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