FDS6576 Model Download Search Results
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FDS6576
onsemi
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1 | High power and current handling capability ; RDS(ON) = 0.014 Ω @ VGS = -4.5 V ; RoHS Compliant.; Low gate charge (44nC typical) ; High performance trench technology for extremely low RDS(ON) ; Fast switching speed ; -11 A, -20 V. ; RDS(ON) = 0.020 Ω @ VGS = -2.5 V ; Extended VGSS range (+-12V) for battery applications | Small Outline Packages | FDS6576 |
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FDS6576
Rochester Electronics LLC
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1 | 11000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | FDS6576 |
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FDS6576
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6576 |
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FDS6576L86Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6576L86Z |
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FDS6576D84Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6576D84Z |
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FDS6576_NL
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6576_NL |
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FDS6576F011
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6576F011 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
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