FDS6675BZ Model Download Search Results
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FDS6675BZ
onsemi
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1 | Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A ; Extended VGS range (-25V) for battery applications ; RoHS Compliant ; High performance trench technology for extremely low rDS(on) ; Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A ; HBM ESD protection level of 5.4 KV typical (note 3) ; High power and current handing capability | Small Outline Packages | FDS6675BZ |
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FDS6675BZ
Rochester Electronics LLC
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1 | 11000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8 | FDS6675BZ |
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FDS6675BZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 11A I(D), 30V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6675BZ |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
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