FDS6875 Model Download Search Results
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FDS6875
onsemi
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1 | High power and current handling capability.; Low gate charge (23nC typical).; -6 A, -20 V RDS(ON) = 0.030 Ω @ VGS = -4.5 V RDS(ON) = 0.040 Ω @ VGS = -2.5 V.; High performance trench technology for extremely low RDS(ON). | Small Outline Packages | FDS6875 |
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FDS6875
Rochester Electronics LLC
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1 | 6A, 20V, 0.03ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SOIC-8 | FDS6875 |
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FDS6875
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6875 |
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FDS6875L86Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6875L86Z |
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FDS6875L99Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6875L99Z |
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FDS6875D84Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6875D84Z |
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FDS6875_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6875_NL |
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FDS6875S62Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6875S62Z |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
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