FDS8878 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDS8878 onsemi	1	RDS(ON) = 14 mΩ @ VGS = 10 V @ ID = 10.2 A; High power and current handling capability; High performance trench technology for extremely low rDS(ON); RDS(ON) = 17 mΩ @ VGS = 4.5 V @ ID = 9.3 A; Low gate charge; RoHS Compliant	Small Outline Packages	FDS8878	3D model available Symbol and footprint available 3	1 Download Model
	FDS8878 Rochester Electronics LLC	1	10.2A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8		FDS8878	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS8878 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.2A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS8878	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS8878_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.2A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS8878_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDS8878-F123 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDS8878-F123	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS8878-F123 onsemi	1	Power Field-Effect Transistor, 9.3A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA		FDS8878-F123	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS8878-NBSE002 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDS8878-NBSE002	3D model not available Symbol and footprint not available 0	0 Build or Request

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