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FDY4000CZ
onsemi
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1 | ESD Protection Diode (note 3); Q2 P-Channel Max. RDS(on) = 1.2 Ω at VGS = -4.5 V, ID = -350 mA Max. RDS(on) = 1.6 Ω at VGS = -2.5 V, ID = -300 mA Max. RDS(on) = 2.7 Ω at VGS = -1.8 V, ID = -150 mA; RoHS Compliant; Q1 N-Channel Max. RDS(on) = 0.7 Ω at VGS = 4.5 V, ID = 600 mA Max. RDS(on) = 0.85 Ω at VGS = 2.5 V, ID = 500 mA Max. RDS(on) = 1.25 Ω at VGS = 1.8 V, ID = 150 mA | SOT23 (6-Pin) | FDY4000CZ |
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FDY4000CZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Trench Mosfet FET | FDY4000CZ |
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