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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FFSB0465A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Other | FFSB0465A |
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FFSB0865B
onsemi
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1 | Low Vf @ TJ:175 °C; Max Junction Temperature 175 °C; Avalanche Rated 33 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Other | FFSB0865B |
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FFSB0865A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Other | FFSB0865A |
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FFSB0665A
onsemi
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1 | SiC Schottky Diodes 650V 6A SIC SBD Surface Mount TO-263 (D2PAK) | Other | FFSB0665A |
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FFSB0865B-F085
onsemi
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1 | Max Junction Temperature 175 oC; Avalanche Rated 33 mJ; High Surge Current Capacity; Positive Temperature Coefficient; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified | Other | FFSB0865B-F085 |
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FFSB0665B-F085
onsemi
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1 | Max Junction Temperature 175 oC; Avalanche Rated 24.5 mJ; High Surge Current Capacity; Positive Temperature Coefficient; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified | Other | FFSB0665B-F085 |
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FFSB0665B
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 650V V(RRM), Silicon Carbide, TO-263AB | FFSB0665B |
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