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FGA40N65SMD
onsemi
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1 | Fast switching: EOFF =6.5uJ/A ; Positive temperature co-efficient for easy parallel operating; Tightened parameter distribution; Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A; High current capability; Maximum junction temperature : TJ =175 °C; RoHS compliant | Transistor Outline, Vertical | FGA40N65SMD |
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FGA40N65SMD
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel | FGA40N65SMD |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to204_2r.jpg"])
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