FGH40N60SMDF Model Download Search Results
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FGH40N60SMDF
onsemi
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1 | Fast switching: EOFF =6.5uJ/A; RoHS compliant; Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A; High input impedance; Positive temperaure co-efficient for easy parallel operating; Tightened parameter distribution; Maximum junction temperature : TJ =175 °C; High current capability | Transistor Outline, Vertical | FGH40N60SMDF |
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FGH40N60SMDF
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB | FGH40N60SMDF |
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FGH40N60SMD-F085
onsemi
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1 | Positive Temperaure Co-efficient for easy parallel operating; High input impedance; RoHS compliant; Qualified to Automotive Requirements of AEC-Q101; Low saturation voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40A; Maximum Junction Temperature : TJ = 175℃; High current capability; Tightened Parameter Distribution | Transistor Outline, Vertical | FGH40N60SMD-F085 |
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FGH40N60SMDF-F085
onsemi
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1 | IGBT, 600V, 40A, 1.9V, TO-247Field Stop | FGH40N60SMDF-F085 |
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FGH40N60SMDF_F085
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor | FGH40N60SMDF_F085 |
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FGH40N60SMDF_F085
onsemi
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1 | Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB | FGH40N60SMDF_F085 |
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FGH40N60SMD_F085
onsemi
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1 | 600V, 40A, 1.9V, TO-247 Field Stop IGBT, TO-247 3L, 3600-RAIL | FGH40N60SMD_F085 |
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FGH40N60SMD_F085
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB | FGH40N60SMD_F085 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to247_3.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/FGH40N60SMDF-F085.jpg",null,null])
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