FGH60N60SMD Model Download Search Results
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FGH60N60SMD
onsemi
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1 | RoHS compliant; Maximum junction temperature : TJ =175 °C; Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A; High current capability; Positive temperaure co-efficient for easy parallel operating; Tightened parameter distribution; Fast switching: EOFF =7.5uJ/A; High input impedance | Transistor Outline, Vertical | FGH60N60SMD |
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FGH60N60SMD
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AB | FGH60N60SMD |
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FGH60N60SMD-F085
onsemi
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1 | IGBT, 600V, 60A, 1.8V, TO-247Field Stop | Other | FGH60N60SMD-F085 |
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FGH60N60SMD_F085
onsemi
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1 | 600V, 60A, 1.8V, TO-247 Field Stop IGBT, TO-247 3L, 3600-RAIL | FGH60N60SMD_F085 |
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FGH60N60SMD_F085
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT PACKAGE-3 | FGH60N60SMD_F085 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to247_3.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/FGH60N60SMD-F085.jpg",null,null])
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