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FGH60N60SMD - onsemi

Description: RoHS compliant; Maximum junction temperature : TJ =175 °C; Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A; High current capability; Positive temperaure co-efficient for easy parallel operating; Tightened parameter distribution; Fast switching: EOFF =7.5uJ/A; High input impedance

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PCB Footprints
FGH60N60SMD - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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FGH60N60SMD - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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FGH60N60SMD Details

  • Manufacturer Part Number:

    FGH60N60SMD

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.25

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    68 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    600 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    70 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    163 ns

  • Turn-on Time-Nom (ton):

    59 ns

FGH60N60SMD Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for FGH60N60SMD is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • The recommended gate drive voltage for FGH60N60SMD is between 10V to 15V, with a maximum gate-source voltage of ±20V.
  • Yes, FGH60N60SMD can be used in high-frequency switching applications, but ensure proper gate drive and layout to minimize switching losses and ringing.
  • Handle FGH60N60SMD with ESD-protective equipment, wear an ESD strap, and ensure the device is stored in an ESD-protective package to prevent damage.

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FGH60N60SMD Overview

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