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MC33153DR2G
onsemi
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1 | Undervoltage Lockout Optimized for IGBT's; Protection against Overcurrent and Short Circuit; Cost Effectively Drives Power MOSFETs and Bipolar Transistors; High Current Output Stage: 1.0 A Source/2.0 A Sink; Programmable Fault Blanking Time; Negative Gate Drive Capability; Protection Circuits for Both Conventional and Sense IGBTs; Pb-Free Packages are Available | Small Outline Packages | MC33153DR2G |
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