FMG50 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FMG50AQ120N6 SanRex	1	MOSFET 1200V 50A SiC Module,50 A,30 mOhms,- 7 V, + 22 V,- 40 C to + 150 C.	Other	FMG50AQ120N6	3D model available Symbol and footprint available 3	1 Download Model
	IRFMG50UPBF International Rectifier	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFMG50PBF International Rectifier	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFMG50U Infineon Technologies AG	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50U	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFMG50U International Rectifier	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFMG50SCX Infineon Technologies AG	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50SCX	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFMG50SCV Infineon Technologies AG	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50SCV	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFMG50D International Rectifier	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFMG50UPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFMG50 International Rectifier	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFMG50 Infineon Technologies AG	1	Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA		IRFMG50	3D model not available Symbol and footprint not available 0	0 Build or Request

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