FQB9P25TM Model Download Search Results
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FQB9P25TM
onsemi
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1 | Low Crss (Typ. 27 pF); Low Gate Charge (Typ. 29 nC); 100% Avalanche Tested; -9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A | Other | FQB9P25TM |
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FQB9P25TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9.4A I(D), 250V, 0.62ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB9P25TM |
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FQB9P25TM_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9.4A I(D), 250V, 0.62ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB9P25TM_NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
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