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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Low gate charge ( Typ. 4.8nC); 100% avalanche tested; Low Crss ( Typ. 17pF); 11A, 60V, RDS(on) = 115mΩ(Max.) @VGS = 10 V, ID = 5.5A Other FQD13N06LTM 1 Download Model
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FQD13N06LTM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD13N06LTM 0 Build or Request
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FQD13N06LTM Rochester Electronics LLC
1 11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 FQD13N06LTM 0 Build or Request
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FQD13N06LTM_NL Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD13N06LTM_NL 0 Build or Request
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