FQD2N100TM Model Download Search Results
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FQD2N100TM
onsemi
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1 | 1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A; Low gate charge ( Typ. 12nC); 100% avalanche tested; RoHS Compliant; Low Crss ( Typ. 5pF) | Other | FQD2N100TM |
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FQD2N100TM
Rochester Electronics LLC
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1 | 1.6A, 1000V, 9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 | FQD2N100TM |
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FQD2N100TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FQD2N100TM |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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