FQP30N06 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQP30N06 onsemi	1	100% avalanche tested; Low Crss ( Typ. 40pF); Low gate charge ( Typ. 19nC); 175°C maximum junction temperature rating; 30A, 60V, RDS(on) = 40mΩ(Max.) @VGS = 10 V, ID = 15A	Transistor Outline, Vertical	FQP30N06	3D model available Symbol and footprint available 3	1 Download Model
	FQP30N06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP30N06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP30N06L onsemi	1	32A, 60V, RDS(on) = 35mΩ(Max.) @VGS = 10 V, ID = 16A; 175°C maximum junction temperature rating; Low gate charge ( Typ. 15nC); 100% avalanche tested; Low Crss ( Typ. 50pF)	Transistor Outline, Vertical	FQP30N06L	3D model available Symbol and footprint available 3	1 Download Model
	FQP30N06L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP30N06L	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQP30N06LJ69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQP30N06LJ69Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP30N06J69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQP30N06J69Z	3D model not available Symbol and footprint not available 0	0 Build or Request

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