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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Low gate charge ( Typ. 24.5nC); 52.4A, 60V, RDS(on) = 21mΩ(Max.) @VGS = 10 V, ID = 26.2A; 175°C maximum junction temperature rating; Low Crss ( Typ. 90pF); 100% avalanche tested Transistor Outline, Vertical FQP50N06L 1 Download Model
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FQP50N06L Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB FQP50N06L 0 Build or Request
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FQP50N06LJ69Z Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQP50N06LJ69Z 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB FQP50N06L-EPKE0003 0 Build or Request
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