FQPF10N20C Model Download Search Results
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FQPF10N20C
onsemi
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1 | 100% avalanche tested; Low gate charge ( Typ. 20nC); Low Crss ( Typ. 40.5pF); 9.5A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 4.75A | Transistor Outline, Vertical | FQPF10N20C |
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FQPF10N20C
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQPF10N20C |
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FQPF10N20C_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQPF10N20C_NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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