FQPF7N65C Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQPF7N65C onsemi	1	100% avalanche tested; Low Crss ( Typ. 12pF); Low gate charge ( Typ. 28nC); 7A, 650V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 3.5A	Transistor Outline, Vertical	FQPF7N65C	3D model available Symbol and footprint available 3	1 Download Model
	FQPF7N65C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQPF7N65C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQPF7N65C-SW82256 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FQPF7N65C-SW82256	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQPF7N65CYDTU onsemi	1	Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FQPF7N65CYDTU	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQPF7N65CYDTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor		FQPF7N65CYDTU	3D model not available Symbol and footprint not available 0	0 Build or Request

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