FQT5P10TF Model Download Search Results
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FQT5P10TF
onsemi
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1 | 100% avalanche tested; Low gate charge ( Typ. 6.3nC); Low Crss ( Typ. 18pF); -1.0A, -100V, RDS(on) = 1.05Ω(Max.) @VGS = -10 V, ID = -0.5A | SOT223 (3-Pin) | FQT5P10TF |
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FQT5P10TF
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 1A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FQT5P10TF |
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