FQU20N06LTU Model Download Search Results
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FQU20N06LTU
onsemi
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1 | 100% avalanche tested; Low Crss ( Typ. 35pF); Low gate charge ( Typ. 9.5nC); 17.2A, 60V, RDS(on) = 42mΩ(Max.) @VGS = 10 V, ID = 8.6A | Transistor Outline, Vertical | FQU20N06LTU |
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FQU20N06LTU
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | FQU20N06LTU |
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FQU20N06LTU
Rochester Electronics LLC
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1 | 17.2A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | FQU20N06LTU |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to251_3.jpg"])
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