GS61004B-MR Model Download Search Results
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GS61004B-MR
GaN Systems
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1 | 100V, 38A, Enhancement mode GaN Transistor, GaNPX® package, Bottom-side cooled | Other | GS61004B-MR |
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GS61004B-MR
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 38A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET | GS61004B-MR |
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![Part Image](["https://gansystems.com/wp-content/uploads/2020/03/GS61004B-v06.png","https://gansystems.com/wp-content/uploads/2020/03/GS61004B-v06.png",null])
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