GT20J Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	GT20J121 Toshiba	1	(1) Sixth generation(2) Enhancement mode(3) High-speed switching: tf = 0.27µs (typ.) (IC = 20 A)(4) Low saturation voltage: VCE(sat) = 1.25 V (typ.) (IC = 20 A)(5) TO-220SIS (Toshiba package name	Other	GT20J121	3D model available Symbol and footprint available 3	1 Download Model
	GT20J341 Toshiba	1	Toshiba GT20J341, IGBT Transistor, 20 A 600 V, 100kHz, 3-Pin TO-220SIS	Transistor Outline, Vertical	GT20J341	3D model available Symbol and footprint available 3	1 Download Model
	GT20J341,S4X(S Toshiba	1	DISCRETE IGBT TRANSISTOR TO-220SIS MOQ=50 V=1.5 IC=20A	Transistor Outline, Vertical	GT20J341,S4X(S	3D model available Symbol and footprint available 3	1 Download Model
	GT20J121 Toshiba Electronic Devices & Storage Corporation	1	IGBT, 600 V, 20 A, TO-220SIS		GT20J121	3D model not available Symbol and footprint not available 0	0 Build or Request

	GT20J321 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel		GT20J321	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT20J121,S4X Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor		GT20J121,S4X	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT20J101 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel		GT20J101	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT20J341,S4X Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor		GT20J341,S4X	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT20J301 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel		GT20J301	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT20J341 Toshiba Electronic Devices & Storage Corporation	1	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS		GT20J341	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT20J311 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel		GT20J311	3D model not available Symbol and footprint not available 0	0 Build or Request

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