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GT20J341,S4X(S - Toshiba

Description: DISCRETE IGBT TRANSISTOR TO-220SIS MOQ=50 V=1.5 IC=20A

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PCB Footprints
GT20J341,S4X(S - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220SIS-ren1
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3D Models
GT20J341,S4X(S - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220SIS-ren1
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GT20J341,S4X(S Details

  • Manufacturer Part Number:

    GT20J341,S4X(S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Gate-Emitter Voltage-Max:

    25 V

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Surface Mount:

    NO

GT20J341,S4X(S Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the GT20J341,S4X is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a heat sink if necessary, and ensure good thermal design and layout.
  • The maximum current rating for the GT20J341,S4X is 20A.
  • It is recommended to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that the device is stored in an ESD-safe environment.
  • The recommended storage temperature range for the GT20J341,S4X is -40°C to 150°C.

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