IKW50N60H3 Model Download Search Results
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IKW50N60H3
Infineon Technologies AG
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1 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247 | IKW50N60H3 |
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IKW50N60H3FKSA1
Infineon
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1 | IGBT Transistors HIGH SPEED SWITCHINGTRENCHSTOPTMtechnologyoffering•verylowVCEsat•lowEMI•Verysoft,fastrecoveryanti-paralleldiode•maximumjunctiontemperature175°C•qualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•completeproductspectrumandPSpiceModels:http://www.infineon.com/igbt/ | Transistor Outline, Vertical | IKW50N60H3FKSA1 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to247_3.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/IKW50N60H3FKSA1.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to247_3.jpg"])
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