IMTA6 Model Download Search Results
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IMTA65R075M2HXTMA1
Infineon
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1 | Built on Infineon’s robust 2nd generation Silicon Carbide trenchtechnology, CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use, N-Channel 650 V, 30A, 141W, Surface Mount PG-LHSOF-4-1, 75 mΩ, 14.9 nC, -55°C to 175°C | Other | IMTA65R075M2HXTMA1 |
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IMTA65R020M2HXTMA1
Infineon
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1 | SiC MOSFETs SILICON CARBIDE MOSFET | Other | IMTA65R020M2HXTMA1 |
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IMTA65R050M2H
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 43A I(D), 650V, 0.062ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | IMTA65R050M2H |
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IMTA65R060M2H
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 37A I(D), 650V, 0.073ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | IMTA65R060M2H |
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IMTA65R020M2H
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 77A I(D), 650V, 0.024ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | IMTA65R020M2H |
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IMTA65R040M2H
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 54A I(D), 650V, 0.049ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | IMTA65R040M2H |
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![Part Image](["https://www.mouser.com/images/infineon/images/ThinToll-8x8_SPL.jpg",null,null])
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