IPB06 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IPB06N03LA Infineon	1	MOSFET N-CH 25V 50A TO263-3	Other	IPB06N03LA	3D model not available Symbol and footprint available 2	1 Download Model
	IPB065N03LGATMA1 Infineon	1	INFINEON - IPB065N03LGATMA1 - MOSFET, N-CH, 30V, 50A, TO-263-3	Other	IPB065N03LGATMA1	3D model not available Symbol and footprint available 2	1 Download Model
	IPB065N15N3GATMA1 Infineon	1	IPB065N15N3GATMA1 N-Channel MOSFET, 130 A, 150 V OptiMOS 3, 7-Pin D2PAK Infineon	Other	IPB065N15N3GATMA1	3D model available Symbol and footprint available 3	1 Download Model
	IPB060N15N5ATMA1 Infineon	1	OptiMOSª5Power-Transistor,150V	Other	IPB060N15N5ATMA1	3D model available Symbol and footprint available 3	1 Download Model

	IPB068N20NM6ATMA1 Infineon	1	N-Channel 200 V 15.4A (Ta), 134A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-TO263-3-2	Other	IPB068N20NM6ATMA1	3D model available Symbol and footprint available 3	1 Download Model
	IPB065N15N3 G Infineon	1	MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3	Other	IPB065N15N3 G	3D model available Symbol and footprint available 3	1 Download Model
	IPB065N15N3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 130A I(D), 150V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263		IPB065N15N3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB067N08N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB067N08N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB067N08N3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB067N08N3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB06CN10NGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB06CN10NGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB065N10N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB065N10N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB06N03LAG Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 25V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB06N03LAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB065N15N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 130A I(D), 150V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263		IPB065N15N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB06CN10NG Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB06CN10NG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB065N06LGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB065N06LGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB060N15N5 Infineon Technologies AG	1	Power Field-Effect Transistor, 136A I(D), 150V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263		IPB060N15N5	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB065N10N3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB065N10N3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB06P001LATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 91A I(D), 60V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB06P001LATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB067N08N3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB067N08N3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB065N06LG Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB065N06LG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB06P001L Infineon Technologies AG	1	Power Field-Effect Transistor		IPB06P001L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB06CNE8NG Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 85V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB06CNE8NG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB065N03LG Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB065N03LG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB06N03LB Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB06N03LB	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB065N15N3GE8197ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 130A I(D), 150V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263		IPB065N15N3GE8197ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
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