IPB09 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IPB09N03LAG Infineon	1	MOSFET N-Ch 25V 50A D2PAK-2	Other	IPB09N03LAG	3D model not available Symbol and footprint available 2	1 Download Model
	IPB095N20NM6ATMA1 Infineon	1	N-Channel 200 V 13A (Ta), 116A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-TO263-3-U01 ,-55°C ~ 175°C (TJ)	Other	IPB095N20NM6ATMA1	3D model not available Symbol and footprint available 2	1 Download Model
	IPB09N09LA Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB09N09LA	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB09N03LA Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB09N03LA	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB093N04LG Infineon Technologies AG	1	Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB093N04LG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB090N06N3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB090N06N3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB091N06NG Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB091N06NG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB097N08N3G Rochester Electronics LLC	1	70A, 80V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3		IPB097N08N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB090N06N3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB090N06N3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB093N04LGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB093N04LGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB096N03LGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB096N03LGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB097N08N3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB097N08N3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB097N08N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB097N08N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB090N06N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB090N06N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB097N08N3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB097N08N3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB09N03LAGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB09N03LAGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB096N03LG Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB096N03LG	3D model not available Symbol and footprint not available 0	0 Build or Request

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