IPS80 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IPS80R900P7AKMA1 Infineon	1	N-Channel 800 V 6A (Tc) 45W (Tc) Through Hole PG-TO251-3	Other	IPS80R900P7AKMA1	3D model available Symbol and footprint available 3	1 Download Model
	IPS80R750P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 7A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R750P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R600P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 8A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R600P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R2K0P7AKMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 3A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R2K0P7AKMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPS80R1K2P7AKMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R1K2P7AKMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R2K0P7 Infineon Technologies AG	1	Power Field-Effect Transistor,		IPS80R2K0P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R2K4P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 2.5A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R2K4P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R1K4P7AKMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R1K4P7AKMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R750P7AKMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R750P7AKMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R1K4P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R1K4P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R1K2P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.5A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R1K2P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R900P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R900P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R2K4P7AKMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 2.5A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R2K4P7AKMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPS80R600P7AKMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 8A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IPS80R600P7AKMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

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