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1 N-Channel 200 V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount DPAK , 800mOhm , -55°C ~ 150°C (TJ) Other IRFR220PBF 1 Download Model
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IRFR220PBF Vishay Siliconix
1 Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 IRFR220PBF 0 Build or Request
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IRFR220PBF International Rectifier
1 Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA IRFR220PBF 0 Build or Request
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IRFR220PBF-BE3 Vishay Intertechnologies
1 Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA IRFR220PBF-BE3 0 Build or Request
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